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| 2N7081-220M-ISO MECHANICAL DATA Dimensions in mm(inches) 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) N-CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 100V 11A 0.15 10.41 (0.410) 10.67 (0.420) 16.38 (0.645) 16.89 (0.665) 13.38 (0.527) 13.64 (0.537) 3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430) 123 12.07 (0.500) 19.05 (0.750) FEATURES * TO-220 ISOLATED HERMETIC PACKAGE * LOW RDS(ON) 0.64 (0.025) Dia. 0.89 (0.035) 2.54 (0.100) BSC 3.05 (0.120) BSC * SIMPLE DRIVE REQUIREMENTS TO-220 Metal Package Pin 1 - Gate Pin 2 - Drain Pin 3 - Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VDS VGS ID IDM PD TJ , Tstg TL Drain - Source Voltage Gate - Source Voltage Continuous Drain Current Pulsed Drain Current 1 Power Dissipation TC = 25C TC = 100C Operating and Storage Temperature Range Lead Temperature (1/16" from case for 10 sec.) TC = 25C TC = 100C 100V 20V 11A 7.7A 48A 45W 18W -55 to 150C 300C Semelab plc Telephone (01455) 556565 E-mail: sales@semelab.co.uk Fax (01455) 552612. Web site: http://www.semelab.co.uk Prelim. 6/98 2N7081-220M-ISO ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise stated) Parameter BVDSS STATIC ELECTRICAL RATINGS Drain - Source Breakdown Voltage Gate Threshold Voltage VGS(th) Gate - Body Leakage IDSS ID(on) RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IS ISM VSD trr Qrr RJC RJA RCS Zero Gate Voltage Drain Current On-State Drain Current Static Drain - Source On-State Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Continuous Source Current Pulse Source Current 2 Test Conditions VGS = 0 VDS = VGS VDS = 0 VDS = 80V VGS = 0 VDS = 10V VGS = 10V ID = 7.7A VDS = 15V VGS = 0 VDS = 25V f = 1MHz VDD = 50V VGEN =10V RL = 4.1 RG = 7.5 ID = 11A TJ = 125C IDS = 7.7A TJ = 125C VGS = 10V ID = 250A ID = 250A VGS = 20V Min. 100 2 Typ. Max. Unit V 4 100 25 250 V nA A A 11 0.12 0.22 4 600 190 35 7 45 30 10 12 48 5 0.15 0.27 S pF ns SOURCE - DRAIN DIODE CHARACTERISTICS A V ns C 2.8 80 1 K/W Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge PACKAGE CHARACTERISTICS Thermal Resistance Junction - Case IF =11 IF = IS dIF/dt = 100A/s VGS = 0 100 0.7 2.5 300 Thermal Resistance Junction - Ambient Thermal Resistance Case - Sink Semelab plc Telephone (01455) 556565 E-mail: sales@semelab.co.uk Fax (01455) 552612. Web site: http://www.semelab.co.uk Prelim. 6/98 |
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